MC9S08GW64_11 FREESCALE [Freescale Semiconductor, Inc], MC9S08GW64_11 Datasheet - Page 40

• Manufacturer Part Number: MC9S08GW64_11
• Description: HC08 instruction set with added BGND instruction
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Electrical Characteristics
3.14
3.15
This section provides details about program/erase times and program-erase endurance for the FLASH memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
40
1
1
C
D
D
D
D
D
D
D
V
The frequency of this clock is controlled by a software setting.
IREG
C
D
D
D
D
P
P
P
P
D
D
C
C
LCD Frame Frequency
LCD Charge Pump Capacitance
LCD Bypass Capacitance
LCD Glass Capacitance
V
V
V
IREG
IREG
IREG
Max can not exceed V
LCD Specifications
FLASH Specifications
Supply voltage for program/erase
-40C to 85C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
T
T = 25C
TRIM Resolution
Ripple
L
to T
H
= –40C to + 85C
Characteristic
5
2
2
3
Characteristic
DD
3
-0.15 V
1
4
MC9S08GW64 Series MCU Data Sheet, Rev. 3
Table 21. LCD Electricals, 3-V Glass
Table 22. FLASH Characteristics
2
2
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
Symbol
C
10,000

V
f
C
C
Frame
BYLCD
Min
150
RTRIM
1.8
1.8
IREG
—
—
15
glass
LCD
5
100,000
Typical
1.49
Min
20,000
.89
1.5
28
4000
100
—
9
4
4
6
DD
2000
1.00
1.67
Typ
100
100
30
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
—
—
—
—
—
1.85
8000
Max
1.15
100
100
.15
58
.1
1
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
V
Unit
Hz
IREG
nF
nF
pF
%
V
V