M27W256-80N6TR STMicroelectronics, M27W256-80N6TR Datasheet

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M27W256-80N6TR

Manufacturer Part Number
M27W256-80N6TR
Description
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
The M27W400 is a low voltage 4 Mbit EPROM of-
fered in the two range UV (Ultra Violet Erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 512
Kwords of 8 bit or 256 Kwords of 16 bit. The pin-
out is compatible with the most common 4 Mbit
Mask ROM.
The M27W400 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27W400 is offered in PDIP40 and PLCC44 pack-
ages.
January 2000
2.7 to 3.6V LOW VOLTAGE in READ
OPERATION
READ ACCESS TIME:
– 80ns at V
– 100ns at V
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
4 Mbit MASK ROM REPLACEMENT
LOW POWER CONSUMPTION
– Active Current 20mA at 8MHz
– Stand-by Current 15µA
PROGRAMMING VOLTAGE: 12.5V ± 0.25V
PROGRAMMING TIME: 50µs/word
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B8h
CC
CC
= 3.0 to 3.6V
= 2.7 to 3.6V
Low Voltage UV EPROM and OTP EPROM
4 Mbit (512Kb x8 or 256Kb x16)
Figure 1. Logic Diagram
40
BYTEV PP
A0-A17
1
FDIP40W (F)
G
E
18
PLCC44 (K)
V CC
V SS
M27W400
40
M27W400
1
PDIP40 (B)
15
Q15A–1
Q0-Q14
AI03096
1/15

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M27W256-80N6TR Summary of contents

Page 1

LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns 3.0 to 3.6V CC – 100ns 2.7 to 3.6V CC BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER ...

Page 2

... Q15A–1 pin is used for Q15 Data Output. When the BYTEV ganisation is selected and the Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide organisation, then with A– lower 8 bits of the 16 bit data are selected and with A– ...

Page 3

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. ...

Page 4

M27W400 Table 5. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 3. Testing Input Output Waveform High Speed 3V 0V Standard 2.4V 0.4V (1) Table 6. Capacitance (T A Symbol ...

Page 5

... READ line from the system control bus. This ensures that all deselect- ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device ...

Page 6

M27W400 Table 8. Read Mode AC Characteristics ( °C or – ° Symbol Alt Parameter Address Valid to Output t t AVQV ACC Valid BYTE High to Output t t BHQV ST ...

Page 7

Figure 5. Word-Wide Read Mode AC Waveforms A0-A17 E G Q0-Q15 Note: BYTEV = Figure 6. Byte-Wide Read Mode AC Waveforms A–1,A0-A17 E G Q0-Q7 Note: BYTEV = V PP IL. VALID tAVQV tGLQV tELQV VALID ...

Page 8

M27W400 Figure 7. BYTE Transition AC Waveforms A0-A17 A–1 BYTEV PP Q0-Q7 Q8-Q15 Note: Chip Enable (E) and Output Enable ( Table 9. Programming Mode DC Characteristics ( ° 6.25V ± 0.25V ...

Page 9

Table 10. Programming Mode AC Characteristics ( ° 6.25V ± 0.25V Symbol Alt t t Address Valid to Chip Enable Low AVEL Input Valid to Chip Enable Low QVEL DS ...

Page 10

... A0 from V other address lines must be held at V Electronic Signature mode. Byte 0 ( code and byte 1 ( code. For the STMicroelectronics M27W400, these two identifier bytes are given in Table 4 and AI03600 can be read-out on outputs Q7 to Q0. ERASURE OPERATION (applies to UV EPROM) ...

Page 11

... This speed also guarantees 80ns access time For Ceramic Package please contact our Sales Office. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de- vice, please contact the STMicroelectronics Sales Office nearest to you. Table 1. Revision History Date ...

Page 12

M27W400 Table 12. FDIP40W - 40 lead Ceramic Frit-seal DIP with window, Package Mechanical Data Symb Typ 1. 48.26 E 15. 2.54 ea. 14. 8.13 N ...

Page 13

Table 13. PDIP40 - 40 pin Plastic DIP, 600 mils width, Package Mechanical Data Symb Typ A 4. 48. 2.54 ea. 15. Figure 11. PDIP40 ...

Page 14

M27W400 Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data Symb Typ 1. 0. Figure 12. PLCC44 - 44 lead ...

Page 15

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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