K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 15

• Manufacturer Part Number: K4S161622D-TI/E10
• Description: 1M x 16 SDRAM
• Manufacturer: Samsung semiconductor

K4S161622D-TI/E
BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. CLOCK Suspend
2. DQM Operation
*Note : 1. CKE to CLK disable/enable = 1CLK.
DQ(CL2)
DQ(CL3)
DQ(CL2)
DQ(CL3)
DQ(CL2)
DQ(CL3)
3) DQM with Clock Suspended (Full Page Read)
Internal
CMD
DQM
DQM
CMD
CMD
CKE
CKE
CKE
2. DQM makes data out Hi-Z after 2CLKs which should masked by CKE " L"
3. DQM masks both data-in and data-out.
CLK
CLK
CLK
1) Clock Suspended During Write (BL=4)
1) Write Mask (BL=4)
RD
WR
WR
D
D
D
D
0
0
0
0
D
D
D
D
1
1
1
1
DQM to Data-in Mask = 0
Q
Not Written
0
Masked by CKE
Masked by DQM
D
D
D
D
2
2
3
3
Hi-Z
Hi-Z
D
D
Note 2
3
3
Q
Q
2
1
2) Clock Suspended During Read (BL=4)
Hi-Z
Hi-Z
2) Read Mask (BL=4)
RD
RD
Q
Q
4
3
Hi-Z
Hi-Z
Q
Q
0
0
Hi-Z
Hi-Z
D
Q
Q
0
Q
Q
1
0
Masked by DQM
6
5
Q
Q
Suspended Dout
Q
Q
Masked by CKE
2
1
DQM to Data-out Mask = 2
Q
Q
7
6
2
1
Q
Q
CMOS SDRAM
Q
Q
3
2
Rev 1.2 Jan '03
8
7
Q
Q
Q
3
2
3
Q
3