K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 40

• Manufacturer Part Number: K4S161622D-TI/E10
• Description: 1M x 16 SDRAM
• Manufacturer: Samsung semiconductor

CLOCK
K4S161622D-TI/E
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
A
ADDR
10
DQM
CKE
RAS
CAS
/AP
WE
DQ
CS
BA
*Note :
0
Power-down
1
Precharge
1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + tss prior to Row active command.
3. Can not violate minimum refresh specification. (32ms)
tSS
Entry
*Note 1
2
*Note 3
3
4
*Note 2
Power-down
Precharge
5
Exit
Row Active
6
Ra
Ra
Power-down
7
Active
Entry
tSS
8
9
tSS
Power-down
10
Active
Exit
*Note 2
11
Read
Ca
12
13
Qa0
14
Precharge
Qa1
tSHZ
15
Qa2
CMOS SDRAM
Rev 1.1 Jun '01
16
17
18
: Don't care
19