K4S161622D-TI/E10 Samsung semiconductor, K4S161622D-TI/E10 Datasheet - Page 27

• Manufacturer Part Number: K4S161622D-TI/E10
• Description: 1M x 16 SDRAM
• Manufacturer: Samsung semiconductor

K4S161622D-TI/E
0
1
*Note : 1. All inputs expect CKE & DQM can be don
2
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4. A10/AP and BA control bank precharge when precharge command is asserted.
2. Bank active & read/write are controlled by BA.
A10/AP
A10/AP
3
BA
0
1
0
1
0
0
1
4
BA
BA
X
0
1
0
1
0
1
5
Active & Read/Write
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Both Banks
Precharge
Bank A
Bank B
Bank A
Bank B
6
7
8
¡Ç
9
t care when CS is high at the CLK high going edge.
Operation
10
11
12
13
14
15
CMOS SDRAM
Rev 1.1 Jun '01
16
17
18
19