HEF4517BP,652 NXP Semiconductors, HEF4517BP,652 Datasheet - Page 8

IC REGISTER STATIC 64BIT 16DIP

HEF4517BP,652

Manufacturer Part Number
HEF4517BP,652
Description
IC REGISTER STATIC 64BIT 16DIP
Manufacturer
NXP Semiconductors
Series
4000Br
Datasheets

Specifications of HEF4517BP,652

Package / Case
16-DIP (0.300", 7.62mm)
Logic Type
Shift Register
Output Type
Standard
Function
Serial to Parallel
Number Of Elements
2
Number Of Bits Per Element
64
Voltage - Supply
4.5 V ~ 15.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Counting Sequence
Serial to Parallel
Number Of Circuits
2
Logic Family
HEF4000
Propagation Delay Time
60 ns
Supply Voltage (max)
15.5 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Operating Supply Voltage
3.3 V, 5 V, 9 V, 12 V
Supply Voltage (min)
4.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933406710652
HEF4517BPN
HEF4517BPN
NXP Semiconductors
Table 8.
P
12. Waveforms
Table 9.
HEF4517B_6
Product data sheet
Symbol
P
Input
V
0.5V
D
Fig 4.
D
M
can be calculated from the formulas shown. V
I
Measurement points are given in
The logic levels V
Propagation delays for nCP to nQn
Dynamic power dissipation P
Parameter
dynamic power
dissipation
Measurement points
nQn output
nCP input
OH
V
V
and V
0 V
OH
OL
V
Output
V
0.5V
I
V
10 V
15 V
5 V
M
DD
OL
DD
are typical voltage output levels that occur with the output load.
Table 9
Typical formula for P
P
P
P
D
V
t
PHL
D
D
D
M
= 7000 × f
= 28000 × f
= 70000 × f
Rev. 06 — 10 December 2009
SS
V
M
= 0 V; t
i
+ Σ(f
i
i
+ Σ(f
+ Σ(f
r
= t
o
V
0.1V
f
o
o
× C
X
× C
× C
D
20 ns; T
(μW)
L
DD
) × V
L
L
) × V
) × V
DD
amb
DD
DD
2
t
2
2
PLH
= 25
°
C.
where:
f
f
C
V
Σ(f
i
o
DD
= input frequency in MHz,
L
= output frequency in MHz,
o
Dual 64-bit static shift register
= output load capacitance in pF,
× C
= supply voltage in V,
L
V
0.9V
001aaj914
) = sum of the outputs.
Y
DD
HEF4517B
© NXP B.V. 2009. All rights reserved.
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