HYS64T128021GDL-37-A INFINEON [Infineon Technologies AG], HYS64T128021GDL-37-A Datasheet - Page 18

• Manufacturer Part Number: HYS64T128021GDL-37-A
• Description: 200-Pin Small Outline Dual-In-Line Memory Module
• Manufacturer: INFINEON [Infineon Technologies AG]

3
Table 9
Parameter
Voltage on any pins relative to
Voltage on
Voltage on
Barometric Pressure (operating & storage)
Storage Humidity (without condensation)
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
Table 10
Parameter
DIMM Module Operating Temperature Range (ambient)
DRAM Component Case Temperature Range
Storage temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
5) Up to 3000 m.
Table 11
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
1) Under all conditions,
2) Peak to peak AC noise on
3) For any pin on the DIMM connector under test input of 0 V
Data Sheet
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
measurement conditions, please refer to the JEDEC document JESD51-2
85
°
C case temperature before initiating self-refresh operation.
V
V
°
Absolute Maximum Ratings
Operating Temperature Range
Supply Voltage Levels and DC Operating Conditions
DD
DD Q
C DRAM case temperature the Auto-Refresh command interval has to be reduced to
Electrical Characteristics
relative to
relative to
V
DDQ
V
must be less than or equal to
V
SS
V
REF
SS
V
Symbol
V
V
V
V
V
V
I
may not exceed ± 2%
SS
L
DD
DDQ
REF
DDSPD
IH (DC)
IL (DC)
Limit Values
Min.
1.7
1.7
0.49
1.7
V
– 0.30
– 5
Symbol
V
V
V
H
REF
IN
DD
DDQ
STG
,
+ 0.125
HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
V
V
V
OUT
DDQ
REF
V
18
DD
(DC).
V
IN
Limit Values
Min.
– 0.5
– 1.0
– 0.5
+69
5
Nom.
1.8
1.8
0.5
—
—
—
—
V
V
Symbol
T
T
T
H
REF
DDQ
OPR
CASE
STG
OPR
V
is also expected to track noise variations in
+ 0.3 V.
DDQ
Max.
2.3
2.3
2.3
+105
95
min.
0
0
– 55
+69
10
Max.
1.9
1.9
0.51
3.6
V
V
5
Limit Values
DDQ
REF
512 Mbit DDR2 SDRAM
–0.125
+0.3
V
Electrical Characteristics
max.
+65
+95
+100
+105
90
DDQ
09122003-FTXN-KM26
Unit
V
V
kPa
%
t
REFI
Rev. 0.91, 2004-06
Unit
V
V
V
V
V
V
= 3.9 s.
A
Unit
°C
°C
°C
kPa
%
Note/Test
Condition
1)
1)
1)
1)
1)
Notes
1)
2)
3)
Notes
1)2)3)4)
5)
V
DDQ
.