HYS64V2100GCU-10 SIEMENS [Siemens Semiconductor Group], HYS64V2100GCU-10 Datasheet - Page 5

• Manufacturer Part Number: HYS64V2100GCU-10
• Description: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

DC Characteristics
T
Parameter
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current, any input
(0 V <
Output leakage current
(DQ is disabled, 0 V <
Capacitance
T
Parameter
Input capacitance
Input capacitance
Input capacitance
Input capacitance
Input / Output capacitance
Input Capacitance (SCL,SA0-2)
Input/Output Capacitance
Semiconductor Group
A
A
= 0 to 70 C;
= 0 to 70 C;
V
IN
< 3.6 V, all other inputs = 0 V)
V
V
SS
DD
(A0 to A10, BS, RAS, CAS, WE)
(CLK0 - CLK3)
(DQMB0 - DQMB7)
( CS0 - CS3)
I
= 0 V;
= 3.3 V
OUT
I
OUT
V
OUT
= 2.0 mA)
= – 2.0 mA)
V
(DQ0-DQ63,CB0-CB7)
DD,
V
0.3 V, f = 1 MHz
V
CC
DDQ
)
= 3.3 V
0.3 V
5
Symbol
C
C
C
C
C
C
C
I1
I2
I3
I4
IO
sc
sd
Symbol
V
V
V
V
I
I
I(L)
O(L)
IH
IL
OH
OL
2M x 64/72 SDRAM-Module
HYS64(72)V2100G(C)U-10
(x64)
min.
45
20
22
13
12
10
Limit Values
8
– 0.5
min.
– 40
– 40
2.0
2.4
Limit Values
–
max.
(x72)
55
25
38
13
12
10
8
Vcc+0.3
max.
0.8
0.4
40
40
–
Unit
pF
pF
pF
pF
pF
pF
pF
Unit
V
V
V
V
A
A