HYS64V2100GCU-10 SIEMENS [Siemens Semiconductor Group], HYS64V2100GCU-10 Datasheet - Page 6

• Manufacturer Part Number: HYS64V2100GCU-10
• Description: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Standby and Refresh Currents (T
Semiconductor Group
Operating Current
Burst Operating
power
Down Mode
power Down Mode
Current
Current
Parameter
Precharged Standby
Current in Power
Down Mode
Precharged Standby
Current in Non-
Down Mode
Active Standby
Current in Power
Active Standby
Current in Non-
Auto (CBR) Refresh
Self Refresh Current
Symbol
Icc2NS
Icc3NS
Icc2PS
Icc3PS
Icc2P
Icc2N
Icc3P
Icc3N
Icc1
Icc4
Icc5
Icc6
a
Burst length = 4, CL=3
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
CKE<=VIL(max), tck>=tck(min.)
CKE<=VIL(max), tck=infinite
CKE>=VIH(min), tck>=tck (min.),
input changed once in 3 cycles
CKE>=VIH(min), tck=infinite,
no input change
CKE<=VIL(max), tck>=tck(min.)
CKE<=VIL(max), tck=infinite
CKE>=VIH(min), tck>=tck (min.)
input changed one time
CKE=>VIH(min),tck=infinite,
no input change
Burst length = full page,
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
trc>=trc(min)
CKE=<0,2V
= 0 to 70
Test Condition
o
C, VCC = 3.3V
6
2M x 64/72 SDRAM-Module
HYS64(72)V2100G(C)U-10
0.3V)
X64
800
160
200
120
760
720
24
16
80
24
16
16
X72
900
180
225
135
855
810
27
18
90
27
18
18
mA
mA
mA
mA
mA CS=
mA
mA
mA
mA CS=
mA
mA
mA
mA
mA
mA
Note
High
High
1,2
1,2
1,2
1,2