HY5DU283222AF-5 HYNIX [Hynix Semiconductor], HY5DU283222AF-5 Datasheet - Page 21

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HY5DU283222AF-5

Manufacturer Part Number
HY5DU283222AF-5
Description
128M(4Mx32) GDDR SDRAM
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
Note : 1. V
DC CHARACTERISTICS I
Note : 1. V
Rev. 0.7 / Jun. 2004
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
Voltage on V
Voltage on V
Output Short Circuit Current
Power Dissipation
Soldering Temperature ⋅ Time
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
2. V
3. V
4. Supports 300/275/250/200MHz
5. Supports 500/450/400/350MHz
Parameter
Parameter
Peak to peak noise on V
IL
REF
DDQ
IN
(min) is acceptable -1.5V AC pulse width with ≤ 5ns of duration.
DD
DDQ
= 0 to 3.6V, All other pins are not tested under V
is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same.
Parameter
must not exceed the level of V
relative to V
relative to V
SS
SS
SS
REF
Symbol
Symbol
may not exceed ± 2% of the DC value.
(TA=0 to 70
V
V
V
V
V
V
V
I
V
DDQ
I
REF
DD
LO
OH
OL
IH
TT
LI
IL
DD
(TA=0 to 70
.
o
C, Voltage referenced to V
V
V
0.49*V
V
Symbol
REF
REF
T
IN
V
SOLDER
V
T
Min
2.65
2.65
TT
V
-0.3
, V
I
2.2
2.2
DDQ
T
P
STG
o
OS
DD
+ 0.15
Min
- 0.04
A
D
C, Voltage referenced to V
+ 0.76
-2
-5
OUT
DDQ
-
IN
=0V. 2. D
0.5*V
Typ
V
2.5
2.8
2.5
2.8
REF
-
-
OUT
DDQ
V
SS
TT
Max
= 0V)
is disabled, V
- 0.76
2
5
-
V
SS
V
V
0.51*V
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
-55 ~ 125
REF
DDQ
Rating
REF
260 ⋅ 10
0 ~ 70
= 0V)
2.625
2.625
Max
2.95
2.95
50
2
+ 0.04
- 0.15
+ 0.3
DDQ
OUT
=0 to 2.7V
Unit
uA
uA
V
V
HY5DU283222AF
Unit
V
V
V
V
V
V
V
V
I
I
OH
OL
o
Unit
C ⋅ sec
= +15.2mA
= -15.2mA
mA
o
o
W
Note
V
V
V
C
C
Note
1
2
1, 4
1, 5
1, 4
1, 5
2
3
21

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