HY5DU283222AF-5 HYNIX [Hynix Semiconductor], HY5DU283222AF-5 Datasheet - Page 22

• Manufacturer Part Number: HY5DU283222AF-5
• Description: 128M(4Mx32) GDDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

DC CHARACTERISTICS II
Note :
1. I
2. Min. of t
Rev. 0.7 / Jun. 2004
Operating Current
Operating Current
Precharge Standby
Current in Power
Down Mode
Precharge Standby
Current in Non
Power Down Mode
Active Standby Cur-
rent in Power Down
Mode
Active Standby Cur-
rent in Non Power
Down Mode
Burst Mode Operat-
ing Current
Auto Refresh Current
Self Refresh Current
Operating Current -
Four Bank Operation
DD1, IDD4
Parameter
RFC
and I
(Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
DD5
Symbol
depend on output loading and cycle rates. Specified values are measured with the output open.
I
I
I
I
I
I
I
I
I
I
DD2N
DD3N
DD2P
DD3P
DD0
DD1
DD4
DD5
DD6
DD7
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min);
DQ,DM and DQS inputs changing
twice per clock cycle; address and
control inputs changing once per
clock cycle
Burst length=4, One bank active
t
CKE ≤ V
CKE ≥ V
t
changed one time during 2clks
CKE ≤ V
CKE ≥ V
t
changed one time during 2clks
t
All banks active
t
All banks active
CKE ≤ 0.2V
Four bank interleaving with BL=4,
Refer to the following page for
detailed test condition
RC
CK
CK
CK
RC
=min, Input signals are
≥ t
≥ t
≥ t
= min, Input signals are
CK
RFC
RC
IH
IL
IL
IH
(min), I
Test Condition
(min), I
(min),
(max), t
(max), t
(min), /CS ≥ V
(min), /CS ≥ V
(TA=0 to 70
OL
OL
=0mA
CK
CK
=0mA
=min
=min
o
IH
IH
C, Voltage referenced to V
(min),
(min),
1100 1000
230
250
140
190
750
400
45
50
2
3
210
230
130
170
700
400
22
40
45
3
190
210
120
150
650
350
900
25
35
40
SS
3
= 0V)
180
200
110
130
590
350
800
28
30
35
3
Speed
170
190
100
115
500
300
700
33
25
30
3
160
180
110
450
300
600
36
25
90
30
3
HY5DU283222AF
150
170
110
450
270
600
25
90
30
4
3
140
160
100
370
270
600
25
80
30
5
3
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
22
Note
1,2
1
1
1