IPB100N06S3-03_07 INFINEON [Infineon Technologies AG], IPB100N06S3-03_07 Datasheet - Page 3

• Manufacturer Part Number: IPB100N06S3-03_07
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
1)
information see Application Note ANPS071E.
2)
3)
4)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Qualified at -5V and +20V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5 K/W the chip is able to carry 223 A at 25°C. For detailed
V
f =1 MHz
V
V
R
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
page 3
=25 °C
=27.5 V, I
/dt =100 A/µs
=1.3
=0 V, V
=27.5 V,
=10 V, I
=11 V, I
=0 to 10 V
=0 V, I
Conditions
F
2
DS
=80 A,
D
D
(one layer, 70 µm thick) copper area for drain
F
=80 A,
=80 A,
=25 V,
=I
S
,
IPI100N06S3-03, IPP100N06S3-03
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
21620
3290
3140
typ.
130
320
140
205
5.6
0.9
54
67
77
60
70
-
-
IPB100N06S3-03
max.
480
100
400
1.3
-
-
-
-
-
-
-
-
-
-
-
-
2007-11-07
Unit
pF
ns
nC
V
A
V
ns
nC