IPB100N06S3-03_07 INFINEON [Infineon Technologies AG], IPB100N06S3-03_07 Datasheet - Page 6

• Manufacturer Part Number: IPB100N06S3-03_07
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
230µA
0.6
V
T
SD
j
60
[°C]
[V]
25 °C
0.8
2300µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AS
= f(t
1000
100
10
10
10
10
1
DS
5
4
3
AV
0
1
); V
)
Crss
Coss
Ciss
j(start)
GS
IPI100N06S3-03, IPP100N06S3-03
= 0 V; f = 1 MHz
5
10
10
t
V
AV
150°C
DS
15
[µs]
[V]
IPB100N06S3-03
100
20
100°C
25
2007-11-07
25°C
1000
30