IPB100N06S3-03_07 INFINEON [Infineon Technologies AG], IPB100N06S3-03_07 Datasheet - Page 7

• Manufacturer Part Number: IPB100N06S3-03_07
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
6000
5000
4000
3000
2000
1000
= f(T
= f(Q
12
10
0
8
6
4
2
0
0
0
j
)
gate
100 A
25 A
50 A
D
); I
DD
D
100
= 80 A pulsed
50
200
Q
T
gate
100
j
[°C]
[nC]
300
11 V
150
400
44 V
500
200
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
66
64
62
60
58
56
54
52
50
48
46
-60
= f(T
Q
Q
gs
gs
j
IPI100N06S3-03, IPP100N06S3-03
); I
-20
D
= 1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPB100N06S3-03
100
Q
Q
gate
gate
140
2007-11-07
180