BSS138NL6327HTSA1 Infineon, BSS138NL6327HTSA1 Datasheet

no-image

BSS138NL6327HTSA1

Manufacturer Part Number
BSS138NL6327HTSA1
Description
Mosfet n-Ch 60v 230ma Sot-23
Manufacturer
Infineon
Datasheet
Rev. 2.84
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS138N
BSS138N
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
L6327: 3000
L6433: 10000
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Marking
SKs
SKs
T
T
T
I
di /dt =200 A/µs,
T
T
JESD22-A114 (HBM)
D
MIL-STD 883 (HBM)
page 1
A
A
A
j,max
A
=0.23 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
D
=48 V,
DS
DS(on),max
Class 1 (<1999V)
Class 0 (<250V)
-55 ... 150
55/150/56
Value
0.23
0.18
0.92
0.36
±20
PG-SOT-23
6
60
3.5
0.23
BSS138N
Unit
A
kV/µs
V
W
°C
Ω
V
A
2011-06-07

Related parts for BSS138NL6327HTSA1

BSS138NL6327HTSA1 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSS138N PG-SOT-23 BSS138N PG-SOT-23 Parameter Continuous drain current Pulsed drain current ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.84 Symbol Conditions R thJA =25 °C, unless ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation =f tot A 0.4 0.3 0.2 0 Safe operating area =f =25 ° parameter limited by on-state resistance ...

Page 5

Typ. output characteristics =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics =f ...

Page 6

Drain-source on-state resistance =f =0. DS(on % -60 - Typ. capacitances C =f MHz ...

Page 7

Typ. gate charge =f =0.23 A pulsed V GS gate D parameter 0.2 0.4 Q gate Rev. 2.84 14 Drain-source breakdown voltage =f(T V BR(DSS) ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 2.84 Packaging: page 8 BSS138N 2011-06-07 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords