BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet
BSS139H6327XT
Specifications of BSS139H6327XT
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BSS139H6327XT Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead-plating; RoHS compliant ° Halogen free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type Package ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...
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Typ. output characteristics I =f =25 ° parameter 0 0.16 0.12 0.08 0. Typ. transfer characteristics I =f |>2|I |R ...
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Drain-source on-state resistance R =f =0.015 A; V DS(on % -60 - Threshold voltage bands I =f =25 °C D ...
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Forward characteristics of reverse diode I =f parameter 0.1 150 °C 0.01 0.001 0 0 Drain-source breakdown voltage V =f =250 µA BR(DSS 300 280 260 240 ...
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Package Outline: Footprint: Dimensions in mm Rev Packaging: page 8 BSS139 2009-08-18 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...