BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 7

• Manufacturer Part Number: BSS139H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS139H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 182 ns
• Gate Charge Qg: 2.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 43 ns
• Part # Aliases: BSS139 BSS139H6327XTSA1 H6327

Rev. 1.
8
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
0.001
0.01
300
280
260
240
220
0.1
SD
1
-60
=f(T
)
0
j
); I
j
-20
D
=250 µA
0.4
150 °C
20
V
T
SD
j
0.8
60
[°C]
25 °C
[V]
150 °C, 98%
100
25 °C, 98%
1.2
140
page 7
180
1.6
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-2
-4
8
6
4
2
0
0
gate
); I
DD
D
=0.1 A pulsed
1
Q
0.2 VDS(max)
gate
[nC]
2
0.5 VDS(max)
0.8 VDS(max)
BSS139
2009-08-18
3