BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 6

• Manufacturer Part Number: BSS139H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS139H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 182 ns
• Gate Charge Qg: 2.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 43 ns
• Part # Aliases: BSS139 BSS139H6327XTSA1 H6327

Rev. 1.
8
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.01
0.1
10
60
50
40
30
20
10
1
=f(T
GS
0
-60
-2
); V
j
); I
DS
D
-20
=3 V; T
=0.015 A; V
N
-1.5
20
j
=25 °C
%98
M
V
GS
L
T
GS
j
[V]
60
[°C]
=0 V
typ
K
100
-1
J
140
56 µA
page 6
180
-0.5
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
1000
-0.5
-1.5
-2.5
100
10
-1
-2
-3
=f(T
DS
0
1
-60
); V
0
j
); V
D
GS
-20
=-3 V; f =1 MHz
DS
5
=3 V; I
20
10
D
=56 µA
V
T
DS
j
60
15
[°C]
%98
[V]
typ
%2
100
20
140
25
BSS139
Ciss
Crss
Coss
2009-08-18
180
30