BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS139H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS139H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 182 ns
• Gate Charge Qg: 2.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 43 ns
• Part # Aliases: BSS139 BSS139H6327XTSA1 H6327

Rev. 1.
8
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
0.4
0.3
0.2
0.1
10
0
DS
-1
-2
-3
-4
0
A
10
0
); T
)
0
limited by on-state
resistance
A
p
=25 °C; D =0
40
10
1
T
V
A
DS
80
[°C]
[V]
10
100 µs
1 ms
10 ms
2
DC
120
10 µs
page 4
160
10
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.12
0.08
0.04
=f(t
10
10
10
10
A
0
3
2
1
0
); V
10
0
p
)
0.01
-4
0.02
0.05
0.5
GS
0.2
0.1
≥10 V
10
p
single pulse
/T
-3
40
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
120
10
BSS139
1
2009-08-18
160
10
2