BSS205NH6327XT Infineon Technologies, BSS205NH6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS205NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS205NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A
• Resistance Drain-source Rds (on): 50 mOhms at 4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.4 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.9 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS205N BSS205NH6327XTSA1 H6327

Rev 2.4
1)
sides of the PCB.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=2 A
DS
=V
=20 V, V
=20 V, V
= 0 , I
=12 V, V
=2.5 V, I
=4.5 V, I
|>2|I
GS
D
, I
D
|R
= 250 µA
D
D
D
=11 µA
GS
GS
DS
DS(on)max
=1.95 A
=2.5 A
=0 V,
=0 V,
=0 V
1)
,
min.
0.7
20
-
-
-
-
-
-
Values
0.95
typ.
8.5
63
40
-
-
-
-
-
max.
250
100
100
1.2
85
50
1
-
-
BSS205N
Unit
K/W
V
μA
nA
mΩ
S
2011-07-08