BSS205NH6327XT Infineon Technologies, BSS205NH6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS205NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS205NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A
• Resistance Drain-source Rds (on): 50 mOhms at 4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.4 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.9 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS205N BSS205NH6327XTSA1 H6327

Rev 2.4
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.375
0.125
10
10
10
0.25
DS
-1
-2
-3
0.5
2
1
0
A
10
0
); T
)
-1
0
A
p
=25 °C; D =0
40
10
0
V
10 ms
T
DS
A
1 ms
[°C]
DC
[V]
80
100 µs
10
1
10 µs
120
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
10
A
2.5
1.5
0.5
-1
3
2
1
0
); V
10
3
2
1
0
p
)
-5
0
0.01
GS
0.02
0.05
0.5
0.2
≥4.5 V
0.1
10
20
p
-4
/T
single pulse
40
10
-3
60
10
T
-2
t
p
A
80
[s]
[°C]
10
-1
100
10
120
0
BSS205N
10
140
1
2011-07-08
160
10
2