BSS205NH6327XT Infineon Technologies, BSS205NH6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS205NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS205NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A
• Resistance Drain-source Rds (on): 50 mOhms at 4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.4 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.9 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS205N BSS205NH6327XTSA1 H6327

Rev 2.4
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
10
DS
GS
8
6
4
2
0
4
3
2
1
0
); T
0
0
); |V
4.5 V
j
=25 °C
GS
DS
|>2|I
3 V
D
|R
1
1
DS(on)max
V
V
150 °C
DS
GS
[V]
[V]
2
2
2.5 V
1.8 V
2.4 V
2.2 V
2 V
25 °C
page 5
3
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
100
16
12
D
=f(I
90
80
70
60
50
40
30
20
10
8
4
0
); T
0
0
0
D
j
); T
=25 °C
GS
j
=25 °C
2.2 V
2
2
4
I
I
D
D
4
[A]
[A]
6
2.5 V
6
8
BSS205N
4.5 V
6 V
3.5 V
3 V
2011-07-08
10
8