BSS205NH6327XT Infineon Technologies, BSS205NH6327XT Datasheet - Page 7

• Manufacturer Part Number: BSS205NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS205NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A
• Resistance Drain-source Rds (on): 50 mOhms at 4.5 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 2.4 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.9 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS205N BSS205NH6327XTSA1 H6327

Rev 2.4
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
25
24
23
22
21
20
19
18
17
16
AV
-1
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=2.5 A pulsed
g s
1
4 V
Q
Q
gate
g
Q
2
16 V
[nC]
sw
Q
10 V
g d
3
BSS205N
Q
g ate
2011-07-08
4