PSMN017-30PL,127 NXP Semiconductors, PSMN017-30PL,127 Datasheet

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PSMN017-30PL,127

Manufacturer Part Number
PSMN017-30PL,127
Description
MOSFET N-chan 30 V 17 mohm MOSFET in TO-220
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN017-30PL,127

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
17 mOhms
Mounting Style
Through Hole
Package / Case
TO-220
Power Dissipation
45 W
Factory Pack Quantity
50
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure 13
Figure 13
Figure
Figure
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 4.5 V; I
= 10 V; T
≤ 30 V; R
14; see
14; see
j
D
≤ 175 °C
D
D
D
j(init)
GS
GS
= 10 A; T
= 10 A; T
= 10 A; V
= 10 A; V
= 50 Ω; unclamped
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
Figure 15
j
j
DS
DS
= 25 °C;
= 25 °C;
D
= 15 V;
= 15 V;
= 32 A;
Figure 1
Suitable for logic level gate drive
sources
Motor control
Server power supplies
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
18.7
13.4
1.94
5.1
-
175
Max
30
32
45
23.4
17
-
-
13
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN017-30PL,127 Summary of contents

Page 1

... PSMN017-30PL N-channel mΩ logic level MOSFET in TO220 Rev. 2 — 3 April 2012 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... T pulsed ° ° j(init) D ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL Graphic symbol G mbb076 3 Version SOT78 Min Max - kΩ -20 20 [1] Figure ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL 0 50 100 150 T 003aaj413 =10 μ 100 μ 100 ms 10 ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN017-30PL Product data sheet N-channel mΩ logic level MOSFET in TO220 Conditions Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL Min Typ Max - 3.24 3. 003aaj414 t p δ ...

Page 5

... Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL Min Typ Max 1.3 1.7 2.15 0 2.45 - 0.3 ...

Page 6

... I D 3.5 ( 2.8 V ( (V) DS Fig 6. Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL Min Typ = 4 10 9.2 - 11.4 - 5.1 - 0.89 - 17.3 - 6.5 003aaj418 = 175 ° ° ...

Page 7

... V (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL 003aaj417 (A) D 003aab271 min typ max V ( © NXP B.V. 2012. All rights reserved. ...

Page 8

... Fig 12. Normalized drain-source on-state resistance 003aaj421 3.5 4 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL 2 a 1.5 1 0.5 0 − 120 factor as a function of junction temperature ...

Page 9

... G Fig 16. Input, output and reverse transfer capacitances ( 175° 0.4 All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL (pF function of drain-source voltage; typical values 003aaj425 = 25 ° ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN017-30PL v.2 20120403 • Modifications: Status changed from objective to product. • Various changes to content. PSMN017-30PL v.1 20120228 PSMN017-30PL Product data sheet N-channel mΩ logic level MOSFET in TO220 Data sheet status Change notice ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30PL © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 April 2012 Document identifier: PSMN017-30PL ...

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