PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet

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PSMN017-30LL,115

Manufacturer Part Number
PSMN017-30LL,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN017-30LL,115

Input Capacitance (ciss) @ Vds
526pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Power - Max
37W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
37 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5580-2
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
High efficiency due to low switching
and conduction losses
Small footprint for compact designs
Battery protection
DC-to-DC converters
PSMN017-30LL
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Rev. 03 — 7 July 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
V
T
j
mb
mb
j
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 °C; see
= 25 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 10 V; I
j
D
D
≤ 150 °C
D
GS
= 5 A;
= 5 A;
= 5 A;
Figure 12
Figure 12
Figure 13
Figure 2
= 10 V;
Suitable for logic level gate drive
sources
Load switching
Power ORing
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
20.5 25
-
15
Max Unit
30
15
37
150
23.4 mΩ
17
V
A
W
°C
mΩ
mΩ

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PSMN017-30LL,115 Summary of contents

Page 1

... PSMN017-30LL N-channel QFN3333 mΩ logic level MOSFET Rev. 03 — 7 July 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. ...

Page 2

... avalanche energy unclamped; R Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Min = Figure 14 Figure 17 °C; - j(init) ≤ ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ° j(init) ≤ unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Min Max - kΩ -20 20 Figure Figure 140 - 37 -55 150 -55 150 - 260 ...

Page 4

... N-channel QFN3333 mΩ logic level MOSFET 003aae257 P (%) 150 200 T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL 120 der 100 Normalized total power dissipation as a function of solder point temperature =10 μ 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN017-30LL Product data sheet N-channel QFN3333 mΩ logic level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Min Typ Max - 3.6 8.4 [ 003aae259 t p δ ...

Page 6

... see Figure see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 15 j All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Min Typ Max Unit 0 1.3 1 0.02 1 µ µ 100 100 ...

Page 7

... R DSon (mΩ) C iss 45 C rss (V) GS Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Min Typ - 18.3 - 5 003aae266 © NXP B.V. 2010. All rights reserved. ...

Page 8

... V GS (th) ( ° - Fig 10. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL 003aae260 10 4.5 4.0 V ( 0.25 0.5 0.75 003aae453 max typ min 0 60 120 mA © ...

Page 9

... R DSon (mΩ) typ max Fig 12. Drain-source on-state resistance as a function 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL drain current; typical values GS(pl) V GS(th) ...

Page 10

... C oss C rss (V) DS Fig 16. Source (diode forward) current as a function (V) 24V 7 2 All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL 150 ° 0.3 0.6 0.9 source-drain (diode forward) voltage; typical values 003aae267 V = 15V (nC) G 003aae268 = 25 ° ...

Page 11

... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN017-30LL v.3 20100707 • Modifications: Status changed from preliminary to product. PSMN017-30LL v.2 20100624 PSMN017-30LL Product data sheet N-channel QFN3333 mΩ logic level MOSFET Data sheet status Change notice Product data sheet ...

Page 13

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL © NXP B.V. 2010. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 7 July 2010 PSMN017-30LL Trademarks © NXP B.V. 2010. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 July 2010 Document identifier: PSMN017-30LL ...

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