PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN017-30LL,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30LL,115

• Input Capacitance (ciss) @ Vds: 526pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5580-2

NXP Semiconductors
PSMN017-30LL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
10
10
(A)
I
10
D
-1
40
30
20
10
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aae257
mb
1
= V
(°C)
DS
200
/ I
D
Rev. 03 — 7 July 2010
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Fig 2.
P
(%)
der
120
DC
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
PSMN017-30LL
100
V
DS
100 μ s
t
1 ms
10 ms
100 ms
p
(V)
=10 μ s
150
© NXP B.V. 2010. All rights reserved.
T
003aae405
003aab937
mb
(°C)
10
200
2
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