PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN017-30LL,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30LL,115

• Input Capacitance (ciss) @ Vds: 526pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5580-2

NXP Semiconductors
PSMN017-30LL
Product data sheet
Fig 7.
Fig 9.
(A)
(S)
I
g
D
fs
30
20
10
20
15
10
0
5
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
5
1
T
j
= 150 °C
10
2
15
T
3
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
003aae262
V
003aae261
I
GS
D
(A)
(V)
20
4
Rev. 03 — 7 July 2010
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
V
(A)
I
GS (th)
(V)
D
20
15
10
5
0
3
2
1
0
-60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
I
D
0
= 1 mA; V
0.25
0
10
DS
= V
PSMN017-30LL
4.5
max
min
typ
GS
4.0
0.5
60
0.75
120
V
GS
© NXP B.V. 2010. All rights reserved.
(V) = 2.6
003aae260
003aae453
T
V
j
3.5
DS
(°C)
3.0
2.8
(V)
180
1
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