PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN017-30LL,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30LL,115

• Input Capacitance (ciss) @ Vds: 526pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5580-2

NXP Semiconductors
PSMN017-30LL
Product data sheet
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Gate-source voltage as a function of gate charge; typical values
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
V
V
(V)
All information provided in this document is subject to legal disclaimers.
DS
GS
003aae264
C
7.5
2.5
C
C
10
(V)
iss
oss
5
0
rss
0
10
2
Rev. 03 — 7 July 2010
3
6V
24V
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Fig 16. Source (diode forward) current as a function of
6
(A)
I
S
20
15
10
5
0
source-drain (diode forward) voltage; typical
values
0
V
9
DS
Q
= 15V
003aae267
G
(nC)
0.3
12
T
PSMN017-30LL
j
= 150 °C
0.6
0.9
T
© NXP B.V. 2010. All rights reserved.
j
= 25 °C
003aae268
V
SD
(V)
1.2
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