PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet - Page 11

• Manufacturer Part Number: PSMN017-30LL,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30LL,115

• Input Capacitance (ciss) @ Vds: 526pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 37W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5580-2

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT873-1 (QFN3333)
PSMN017-30LL
Product data sheet
QFN3333: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 x 3.3 x 1.0 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
SOT873-1
VERSION
OUTLINE
max.
A
1
0.05
0.00
A
1
0.45
0.25
terminal 1
index area
terminal 1
index area
b
E
L
L
0.2
X
IEC
1
2
- - -
h
c
3.4
3.2
D
1
8
D
2.4
2.2
h
e
3.4
3.2
JEDEC
E
All information provided in this document is subject to legal disclaimers.
- - -
D
e
D
1
h
1.80
1.58
E
REFERENCES
h
b
0.65
e
Rev. 03 — 7 July 2010
0
5
4
1.95
e
1
JEITA
- - -
scale
0.55
0.45
1
L
w
v
B
1
E
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
M
M
A
0.52
0.35
C
C
L
2
A
2 mm
0.1
B
v
A
0.05
w
A
1
0.1
y
y
1
C
0.1
y
1
PSMN017-30LL
PROJECTION
EUROPEAN
detail X
C
y
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
10-03-10
19-04-10
c
SOT873-1
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