PSMN017-30BL,118 NXP Semiconductors, PSMN017-30BL,118 Datasheet
PSMN017-30BL,118
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PSMN017-30BL,118 Summary of contents
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... PSMN017-30BL N-channel mΩ logic level MOSFET in D2PAK Rev. 2 — 3 April 2012 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... T pulsed ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL Graphic symbol G mbb076 3 Version SOT404 Min Max - kΩ -20 20 [1] ...
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... T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN017-30BL Product data sheet N-channel mΩ logic level MOSFET in D2PAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL Min Typ Max - 3.18 3 003aaj593 t p δ ...
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... Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL Min Typ Max 1.3 1.7 2.15 0 2.45 - 0.3 ...
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... I D 3.5 ( 2.8 V ( (V) DS Fig 6. Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL Min Typ Max = 0.89 1 6.5 ...
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... V (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL 003aaj417 (A) D 003aab271 min typ max V ( © NXP B.V. 2012. All rights reserved. ...
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... Fig 12. Normalized drain-source on-state resistance 003aaj421 3.5 4 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL 2 a 1.5 1 0.5 0 − 120 factor as a function of junction temperature ...
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... G Fig 16. Input, output and reverse transfer capacitances ( 175° 0.4 All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL (pF function of drain-source voltage; typical values 003aaj425 = 25 ° ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN017-30BL v.2 20120403 • Modifications: Status changed from objective to product. • Various changes to content. PSMN017-30BL v.1 20120228 PSMN017-30BL Product data sheet N-channel mΩ logic level MOSFET in D2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 April 2012 PSMN017-30BL © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 April 2012 Document identifier: PSMN017-30BL ...