PSMN017-30BL,118 NXP Semiconductors, PSMN017-30BL,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN017-30BL,118
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in D2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30BL,118

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 47 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN017-30BL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
R
V
(mΩ)
DSon
GS (th)
(V)
60
40
20
3
2
1
0
0
-60
junction temperature
of drain current; typical values
T
5
j
= 25 °C
3
10
0
15
max
min
typ
60
20
120
3.5
V
GS
25
All information provided in this document is subject to legal disclaimers.
003aaj421
003a a c982
(V) = 10
T
j
I
(°C)
D
(A)
4.5
180
30
Rev. 2 — 3 April 2012
N-channel 30 V 17 mΩ logic level MOSFET in D2PAK
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN017-30BL
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2012. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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