PSMN017-30LL,115 NXP Semiconductors, PSMN017-30LL,115 Datasheet - Page 12
PSMN017-30LL,115
Manufacturer Part Number
PSMN017-30LL,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN017-30LL115.pdf
(15 pages)
Specifications of PSMN017-30LL,115
Input Capacitance (ciss) @ Vds
526pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Power - Max
37W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
37 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5580-2
NXP Semiconductors
8. Revision history
Table 7.
PSMN017-30LL
Product data sheet
Document ID
PSMN017-30LL v.3
Modifications:
PSMN017-30LL v.2
Revision history
20100707
20100624
Release date
•
Status changed from preliminary to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 03 — 7 July 2010
N-channel QFN3333 30 V 17 mΩ logic level MOSFET
Change notice
-
-
PSMN017-30LL
Supersedes
PSMN017-30LL v.2
-
© NXP B.V. 2010. All rights reserved.
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