PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN9R5-100XS
Product data sheet
Fig 18. Source current as a function of source-drain voltage; typical values
(A)
I
S
160
120
80
40
0
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
0
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
T
0.4
j
= 175 ° C
0.8
T
V
j
003aag600
SD
= 25 ° C
(V)
1.2
PSMN9R5-100XS
© NXP B.V. 2012. All rights reserved.
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