PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
7. Characteristics
Table 7.
PSMN9R5-100XS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source charge
post-threshold gate-source charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
V
T
see
V
T
V
T
see
V
R
D
D
D
D
D
D
D
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
Rev. 3 — 6 March 2012
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 10 A; V
= 10 A; V
Figure
Figure 10
Figure 10
Figure
Figure 13
Figure 13
Figure
Figure
Figure 17
Figure 17
= 100 V; V
= 100 V; V
= 50 V; V
= 50 V; V
= 50 V; V
= 50 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
10; see
12; see
14; see
14; see
DS
DS
DS
DS
DS
D
D
D
GS
GS
GS
DS
L
GS
GS
DS
= 50 V; V
= 50 V;
= 10 A; T
= 10 A; T
= 10 A; T
GS
GS
= V
= V
= V
= 5 Ω; V
Figure
Figure 16
Figure
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
GS
GS
GS
Figure 11
Figure 13
Figure 15
Figure 15
; T
; T
; T
16;
16;
GS
j
j
j
j
j
j
GS
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C;
= 100 °C;
= 175 °C;
j
j
j
= 25 °C
j
j
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 25 °C
= 100 °C
= 10 V;
PSMN9R5-100XS
Min
100
90
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
-
2
2
8.15
14.25
22.8
0.7
81.5
15.6
11.9
3.7
24.3
4
4454
302
185
21
22
68
33
© NXP B.V. 2012. All rights reserved.
-
-
-
Max
-
-
4
-
4.6
4
80
100
100
9.6
16.8
26.9
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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