PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 12

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
9. Revision history
Table 8.
PSMN9R5-100XS
Product data sheet
Document ID
PSMN9R5-100XS v.3
Modifications:
PSMN9R5-100XS v.2
Revision history
20120306
20111020
Release date
•
•
Status changed from preliminary to product.
Various changes to content.
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 3 — 6 March 2012
Change notice
-
-
PSMN9R5-100XS
Supersedes
PSMN9R5-100XS v.2
PSMN9R5-100XS v.1
© NXP B.V. 2012. All rights reserved.
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