BSS138BKS,115 NXP Semiconductors, BSS138BKS,115 Datasheet - Page 11

• Manufacturer Part Number: BSS138BKS,115
• Description: MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS138BKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Resistance Drain-source Rds (on): 1.6 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT363-6
• Fall Time: 20 ns
• Forward Transconductance Gfs (max / Min): 0.7 S
• Gate Charge Qg: 0.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.28 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 38 ns

NXP Semiconductors
8. Test information
BSS138BKS
Product data sheet
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 12 August 2011
t
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t
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duty cycle δ =
006aaa812
60 V, 320 mA dual N-channel Trench MOSFET
t
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BSS138BKS
© NXP B.V. 2011. All rights reserved.
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