BSS138BKS,115 NXP Semiconductors, BSS138BKS,115 Datasheet - Page 14

• Manufacturer Part Number: BSS138BKS,115
• Description: MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BSS138BKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Resistance Drain-source Rds (on): 1.6 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT363-6
• Fall Time: 20 ns
• Forward Transconductance Gfs (max / Min): 0.7 S
• Gate Charge Qg: 0.7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.28 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 38 ns

NXP Semiconductors
11. Revision history
Table 8.
BSS138BKS
Product data sheet
Document ID
BSS138BKS v.1
Revision history
20110812
Release date
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 12 August 2011
60 V, 320 mA dual N-channel Trench MOSFET
Change notice
-
BSS138BKS
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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