IRF840BPBF Vishay/Siliconix, IRF840BPBF Datasheet - Page 7

• Manufacturer Part Number: IRF840BPBF
• Description: MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of IRF840BPBF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Resistance Drain-source Rds (on): 850 mOhms at 10 V
• Configuration: Single
• Package / Case: TO-220AB-3

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91070.
Document Number: 91070
S11-0506-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
= 5 V for logic level device
P.W.
D
D
waveform
This datasheet is subject to change without notice.
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver ame type a D.U.T.
• I
• D.U.T. - device under te t
Diode recovery
current
D
controlled by duty factor “D”
Circuit layout con ideration
dV/dt
• Low tray inductance
•
• Low leakage inductance
current tran former
dI/dt
round plane
D =
-
g
Period
P.W.
+
V
I
V
DD
D
= 10 V
+
-
V
DD
a
IRF840, SiHF840
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
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