SI4943DY-E3 Vishay/Siliconix, SI4943DY-E3 Datasheet
SI4943DY-E3
Specifications of SI4943DY-E3
Related parts for SI4943DY-E3
SI4943DY-E3 Summary of contents
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... 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4943DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switching - Computer - Game Systems D Battery Switching - 2-Cell Li-lon ...
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... Si4943DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71682 S-21192—Rev. B, 29-Jul-02 New Product = 4 25_C J 1.0 1.2 1.4 Si4943DY Vishay Siliconix Capacitance 3000 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4943DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 = 250 0.4 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...