SI4943DY-E3 Vishay/Siliconix, SI4943DY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4943DY-E3
• Description: MOSFET 20V 8.4A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4943DY-E3

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Resistance Drain-source Rds (on): 19 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 24 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 56 ns

Si4943DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
V
1
V
GS
DS
a
Output Characteristics
= 10 thru 5 V
- Drain-to-Source Voltage (V)
a
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
4
4 V
3 V
New Product
V
5
DS
I
V
D
DS
^ - 1 A, V
= - 10 V, V
I
F
= - 16 V, V
V
V
V
V
V
V
V
V
= - 1.7 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
DS
S
DS
DD
DD
Test Condition
DS
= - 1.7 A, V
= V
= - 5 V, V
= - 10 V, I
= - 4.5 V, I
= - 10 V, I
= - 16 V, V
= - 10 V, R
= - 10 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= - 10 V, I
= - 10 V, R
D
= 0 V, T
GS
GS
D
= - 250 mA
D
D
GS
GS
L
L
= - 8.4 A
= - 8.4 A
= - 6.7 A
= "20 V
= - 10 V
= 10 W
= 10 W
= 0 V
= 0 V
J
D
30
24
18
12
G
= 55_C
6
0
= - 8.4 A
0.0
= 6 W
0.5
V
1.0
GS
Transfer Characteristics
Min
- 30
- 1
- Gate-to-Source Voltage (V)
1.5
25_C
T
2.0
C
= 125_C
0.016
0.025
Typ
- 0.8
6.8
5.0
18
36
24
56
30
50
11
2.5
S-21192—Rev. B, 29-Jul-02
Document Number: 71682
3.0
- 55_C
"100
Max
0.019
0.030
- 1.2
54
17
38
85
45
80
- 1
- 5
3.5
4.0
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
4.5