SI1024X-T1 Vishay/Siliconix, SI1024X-T1 Datasheet

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SI1024X-T1

Manufacturer Part Number
SI1024X-T1
Description
MOSFET 20V 0.6A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1024X-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.485 A
Resistance Drain-source Rds (on)
0.70 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563-6
Minimum Operating Temperature
- 55 C
Power Dissipation
250 mW
Factory Pack Quantity
3000
Tradename
TrenchFET

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1024X-T1
Manufacturer:
MAXIM
Quantity:
172
Part Number:
SI1024X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1024X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71170
S11-0854-Rev. E, 02-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
G
D
S
Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
1
2
1
2
3
V
DS
20
(V)
100 Ω
SOT-563
SC-89
Top View
0.70 at V
0.85 at V
1.25 at V
b
R
100 Ω
DS(on)
J
a
GS
GS
GS
= 150 °C)
Dual N-Channel 20 V (D-S) MOSFET
()
= 4.5 V
= 2.5 V
= 1.8 V
6
5
4
a
D
G
S
2
1
2
Marking Code: C
This document is subject to change without notice.
a
I
D
600
500
350
(mA)
A
= 25 °C, unless otherwise noted)
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance: 0.7 
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• 1.8 V Operation
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Symbol
T
Definition
Memories
J
ESD
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
515
370
450
280
145
5 s
- 55 to 150
2000
650
± 6
20
Steady State
485
350
380
250
130
Vishay Siliconix
www.vishay.com/doc?91000
Si1024X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1024X-T1 Summary of contents

Page 1

... 100 Ω Top View Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1024X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance Diode Forward Voltage SD b Dynamic ...

Page 3

... 800 1000 1.60 1.40 1.20 1.00 0.80 0.60 0.6 0 1.0 1.2 1 This document is subject to change without notice. Si1024X Vishay Siliconix MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 600 1 350 mA ...

Page 4

... Si1024X Vishay Siliconix TYPICAL CHARACTERISTICS (T 0 0.1 0.0 - 0.1 - 0 Temperature (°C) J Threshold Voltage Variance vs. Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

A Î Î Î Î Î Î Î Î 6 Î Î Î Î Î Î Î Î aaa C 1 Î Î Î Î Î Î Î Î ...

Page 6

RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead (0.300) Return to Index Return to Index Document Number: 72605 Revision: 21-Jan-08 0.051 (1.300) 0.012 0.020 (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 21 ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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