SI1024X-T1 Vishay/Siliconix, SI1024X-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1024X-T1
• Description: MOSFET 20V 0.6A
• Manufacturer: Vishay/Siliconix

Specifications of SI1024X-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Resistance Drain-source Rds (on): 0.70 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-563-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Factory Pack Quantity: 3000
• Tradename: TrenchFET

Si1024X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
b
a
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
a
a
V
Output Characteristics
DS
a
- Drain-to-Source Voltage (V)
1.0
J
= 25 °C, unless otherwise noted)
1.5
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
V
g
SD
gd
GS
fs
gs
g
= 5 V thru 1.8 V
2.0
A
This document is subject to change without notice.
= 25 °C, unless otherwise noted)
I
V
D
2.5
DS
V
 200 mA, V
DS
1 V
= 10 V, V
V
V
V
V
= 20 V, V
V
V
I
V
V
V
GS
GS
GS
S
DS
DS
DS
DS
DD
3.0
DS
= 150 mA, V
Test Conditions
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
= V
= 5 V, V
= 20 V, V
= 10 V, R
GS
GEN
GS
GS
= 4.5 V, I
, I
GS
= 0 V, T
= 4.5 V, R
D
D
D
D
D
GS
GS
= 400 mA
= 250 µA
L
= 600 mA
= 500 mA
= 350 mA
= ± 4.5 V
GS
= 4.5 V
= 47 
= 0 V
= 0 V
D
J
= 250 mA
= 85 °C
g
= 10 
1200
1000
800
600
400
200
0
0.0
Min.
0.45
700
0.5
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
± 0.5
1.0
Typ.
0.41
0.53
0.70
750
225
0.3
0.8
75
10
36
1
T
25 °C
S11-0854-Rev. E, 02-May-11
C
= - 55 °C
Document Number: 71170
www.vishay.com/doc?91000
1.5
Max.
0.70
0.85
1.25
100
0.9
± 1
1.2
5
125 °C
2.0
Unit
mA
pC
µA
nA
µA
ns
V

S
V
2.5