PBSS4112PANP,115 NXP Semiconductors, PBSS4112PANP,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS4112PANP,115
• Description: Transistors Bipolar - BJT 120V 1A NPN/NPN lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4112PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 150 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 120 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 240, 190
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 305, 375
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4112PANP
Product data sheet
Symbol
V
V
t
t
t
t
t
t
f
C
TR2 (PNP)
I
I
h
V
R
V
d
r
on
s
f
off
T
CBO
EBO
FE
BEsat
BEon
CEsat
BEsat
c
CEsat
Parameter
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
Conditions
All information provided in this document is subject to legal disclaimers.
I
I
t
I
t
V
t
V
I
V
T
V
f = 1 MHz; T
V
V
V
V
t
V
t
V
t
I
t
I
t
I
t
I
T
I
t
C
C
p
C
p
p
Boff
p
p
p
C
p
C
p
C
p
C
C
p
amb
amb
CE
CC
CE
CB
CB
CB
EB
CE
CE
CE
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
= 500 mA; I
= 1 A; I
= 1 A; I
= -500 mA; I
= -1 A; I
= -500 mA; I
= -500 mA; I
= -1 A; I
= -25 mA; T
= -5 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= -96 V; I
= -96 V; I
= -2 V; I
= -2 V; I
= -2 V; I
= 10 V; I
= 25 °C
= 25 °C
B
B
B
B
29 November 2012
= 50 mA; pulsed;
= 100 mA; pulsed;
C
= -100 mA; pulsed;
= -100 mA; pulsed;
amb
C
C
C
C
C
E
C
= 0.5 A; pulsed;
E
E
B
= 0 A
= -100 mA; pulsed;
= -500 mA; pulsed;
= -1 A; pulsed;
= 0 A; i
= 50 mA; f = 100 MHz;
B
B
B
= 500 mA; I
= 0 A
= 0 A; T
= 50 mA; T
amb
= 25 °C
= -50 mA; pulsed;
= -50 mA; pulsed;
= -50 mA;
= 25 °C
e
= 0 A;
j
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
amb
amb
amb
amb
amb
amb
amb
amb
amb
amb
= 150 °C
Bon
amb
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 mA;
= 25 °C
Min
-
-
-
-
-
-
-
-
-
-
60
-
-
-
-
190
50
15
-
-
-
-
-
PBSS4112PANP
Typ
-
-
-
-
20
440
460
615
390
1005
120
4.5
-
-
-
305
85
25
-150
-335
-
-
-
© NXP B.V. 2012. All rights reserved
Max
1
1.1
1.1
0.9
-
-
-
-
-
-
-
7
-100
-50
-100
-
-
-
-220
-480
440
-1
-1.1
Unit
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
nA
µA
nA
mV
mV
mΩ
V
V
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