PBSS4112PANP,115 NXP Semiconductors, PBSS4112PANP,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS4112PANP,115
• Description: Transistors Bipolar - BJT 120V 1A NPN/NPN lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4112PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 150 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 120 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 240, 190
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 305, 375
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4112PANP
Product data sheet
Fig. 3.
Fig. 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB 35 µm, mounting pad for collector 1 cm
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
4-layer PCB 35 µm, standard footprint
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
-5
-5
duty cycle = 1
duty cycle = 1
0.75
0.33
0.1
0.02
0.75
0.33
0.1
0.02
0
0
0.05
0.01
0.05
0.01
0.5
0.2
0.5
0.2
10
10
-4
-4
10
10
-3
-3
All information provided in this document is subject to legal disclaimers.
10
10
-2
-2
29 November 2012
2
10
10
-1
-1
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
1
1
10
10
PBSS4112PANP
10
10
2
2
© NXP B.V. 2012. All rights reserved
t
t
p
p
006aad167
006aad168
(s)
(s)
10
10
3
3
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