PBSS4160U T/R NXP Semiconductors, PBSS4160U T/R Datasheet
PBSS4160U T/R
Specifications of PBSS4160U T/R
Related parts for PBSS4160U T/R
PBSS4160U T/R Summary of contents
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... Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4160U 4. Marking Table 4. Type number PBSS4160U [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS4160U_3 Product data sheet Pinning Description base emitter collector Ordering information Package ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB δ th(j-a) 0.75 (K/W) 0.50 0.33 0. 0.10 0.05 0. − ...
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... NXP Semiconductors 3 10 δ th(j-a) (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values th(j-a) δ (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. −5 − Ceramic PCB standard footprint ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4160U_3 Product data sheet Characteristics C unless otherwise specified. Parameter Conditions collector-base cut-off current ...
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... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 V CEsat (mV) −1 10 (1) (2) (3) −2 10 − ...
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... NXP Semiconductors 1.2 V BEsat (V) 1.0 (1) 0.8 (2) 0.6 (3) 0.4 0.2 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 2.0 I (mA (A) 52.0 1.6 39.0 26.0 1.2 13.0 0.8 0 °C T amb Fig 11. Collector current as a function of collector-emitter voltage ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition I Fig 14. Test circuit for switching times PBSS4160U_3 Product data sheet (probe) oscilloscope 450 Ω −25 mA open 100 Ω 0 ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT323 (SC-70) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4160U [1] For further information and the availability of packing methods, see PBSS4160U_3 Product data sheet 2.2 1.8 3 2.2 1.35 2.0 1.15 1 1.3 Dimensions in mm ...
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... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint 3.65 Fig 17. Wave soldering footprint PBSS4160U_3 Product data sheet NPN low V 2.65 0.75 1.325 1. 0.60 2.35 0.85 (3×) 1 0.55 (3×) 2.40 4.60 4.00 1. 2.10 1 preferred transport direction during soldering Rev. 03 — 11 December 2009 PBSS4160U (BISS) transistor CEsat solder lands solder paste 0.50 (3× ...
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... Revision history Document ID Release date PBSS4160U_3 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering • Figure 17 “Wave soldering ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information ...