PBSS4160U T/R NXP Semiconductors, PBSS4160U T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS4160U T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160U T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 415 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160U,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS4160U_3
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Pin
1
2
3
Type number
PBSS4160U
Type number
PBSS4160U
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
base
emitter
collector
Package
Name
SC-70
Rev. 03 — 11 December 2009
Description
plastic surface mounted package; 3 leads
Marking code
52*
60 V, 1 A NPN low V
[1]
Simplified outline
1
3
2
PBSS4160U
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
1
sym021
Version
SOT323
3
2
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