PBSS4160U T/R NXP Semiconductors, PBSS4160U T/R Datasheet - Page 12

• Manufacturer Part Number: PBSS4160U T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160U T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 415 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160U,115

NXP Semiconductors
12. Revision history
Table 9.
PBSS4160U_3
Product data sheet
Document ID
PBSS4160U_3
Modifications:
PBSS4160U_2
PBSS4160U_1
Revision history
Release date
20091211
20050719
20040423
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 16 “Reflow soldering
Figure 17 “Wave soldering
Rev. 03 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
footprint”: updated
footprint”: updated
60 V, 1 A NPN low V
Change notice
-
-
-
PBSS4160U
Supersedes
PBSS4160U_2
PBSS4160U_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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