PESD3V3L2UM T/R NXP Semiconductors, PESD3V3L2UM T/R Datasheet - Page 2

• Manufacturer Part Number: PESD3V3L2UM T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors
• Series: PESDxL2UMr

Specifications of PESD3V3L2UM T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 13 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 3 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 0.62 (Max) mm W x 1.02 (Max) mm L
• Package / Case: SOT-883
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 10000
• Part # Aliases: PESD3V3L2UM,315

NXP Semiconductors
FEATURES
• Uni-directional ESD protection of two lines or
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
• Leadless ultra small SOT883 surface mount package
• Board space 1.17 mm
• ESD protection >15 kV
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communication systems
• Audio and video equipment.
MARKING
2005 May 23
PESD3V3L2UM
PESD5V0L2UM
bi-directional ESD protection of one line
(1 × 0.6 × 0.5 mm)
8 kV (contact).
Low capacitance double ESD protection
diode
TYPE NUMBER
2
(approx. 10% of SOT23)
MARKING CODE
F2
F1
2
DESCRIPTION
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
PINNING
Fig.1 Simplified outline (SOT883) and symbol.
PIN
2
1
1
2
3
Bottom view
Top view
cathode 1
cathode 2
common anode
PESDxL2UM series
3
DESCRIPTION
MLE220
2
Product data sheet
3
1