PESD3V3L2UM T/R NXP Semiconductors, PESD3V3L2UM T/R Datasheet - Page 5

• Manufacturer Part Number: PESD3V3L2UM T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors
• Series: PESDxL2UMr

Specifications of PESD3V3L2UM T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 13 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 3 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 0.62 (Max) mm W x 1.02 (Max) mm L
• Package / Case: SOT-883
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 10000
• Part # Aliases: PESD3V3L2UM,315

NXP Semiconductors
2005 May 23
handbook, halfpage
handbook, halfpage
Low capacitance double ESD protection
diode
Fig.2
P
V
Fig.4
P ZSM
ZSM
ZSM
I ZSM
(W)
(A)
10
10
10
10
= V
is the non-repetitive peak reverse voltage at I
−1
10
10
1
1
2
−2
−2
ZSM
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
x I
ZSM
.
10
10
−1
−1
PESD3V3L2UM
PESD5V0L2UM
PESD5V0L2UM
1
1
PESD3V3L2UM
t p (ms)
t p (ms)
ZSM
MLE215
MLE217
.
10
10
5
handbook, halfpage
handbook, halfpage
T
Fig.3
Fig.5
j
= 25 °C; f = 1 MHz.
(pF)
(%)
C d
I pp
120
80
40
26
22
18
14
10
6
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
8/20 µs pulse waveform according to
IEC 61000-4-5.
1
10
100 % I pp ; 8 µs
2
PESDxL2UM series
e
−t
PESD5V0L2UM
PESD3V3L2UM
20
3
50 % I pp ; 20 µs
30
Product data sheet
4
t (µs)
V R (V)
MLE218
MLE216
40
5