PESD3V3L2UM T/R NXP Semiconductors, PESD3V3L2UM T/R Datasheet - Page 4

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PESD3V3L2UM T/R

Manufacturer Part Number
PESD3V3L2UM T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Series
PESDxL2UMr
Datasheet

Specifications of PESD3V3L2UM T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
5.32 V
Clamping Voltage
13 V
Operating Voltage
3.3 V
Peak Surge Current
3 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
0.62 (Max) mm W x 1.02 (Max) mm L
Package / Case
SOT-883
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
10000
Part # Aliases
PESD3V3L2UM,315
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
2005 May 23
Per diode
V
V
I
V
V
S
r
C
j
RM
diff
= 25 °C unless otherwise specified.
F
RWM
(CL)R
BR
Z
Low capacitance double ESD protection
diode
d
SYMBOL
forward voltage
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
temperature coefficient
differential resistance
diode capacitance
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PESD3V3L2UM
PESD5V0L2UM
PARAMETER
I
V
V
8/20 µs pulse
I
I
I
I
I
I
I
I
I
I
I
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
F
pp
pp
pp
pp
pp
pp
pp
pp
Z
Z
R
R
R
= 200 mA
= 1 mA
= 1 mA
= 1 mA
= 1 A; notes 1 and 2
= 3 A; notes 1 and 2
= 1 A; notes 1 and 3
= 3 A; notes 1 and 3
= 1 A; notes 1 and 2
= 2.5 A; notes 1 and 2
= 1 A; notes 1 and 3
= 2.5 A; notes 1 and 3
= 3.3 V
= 5 V
CONDITIONS
4
R
R
R
R
= 0
= 5
= 0
= 5
5.32
6.46
MIN.
PESDxL2UM series
1
75
5
5.6
6.8
1.3
2.9
22
12
16
8
TYP.
Product data sheet
1.2
3.3
5
300
25
8
12
9
13
10
13
11
15
5.88
7.14
200
100
28
17
19
11
MAX.
V
V
V
nA
nA
V
V
V
V
V
V
V
V
V
V
mV/K
mV/K
pF
pF
pF
pF
UNIT

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